Sarit Dhar - Faculty - Physics - Departments - Auburn University College of Sciences and Mathematics

Sarit Dhar
Assistant Professor

Office: 305 Allison Laboratory

Address:
206 Allison Laboratories
Auburn, AL 36849-5319

Phone: (334) 844-4618
Email: sarit_dhar@auburn.edu

Education
Ph.D., Vanderbilt University	2005
M.S., Indian Institute of Technology	2000
B.S., Indian Institute of Technology	1998

Professional Employment
Assistant Professor, Auburn University	2012- present
Research Scientist, Cree Inc.	2008-2012
Research Associate, Vanderbilt University	2005-2008
Graduate Research Assistant, Vanderbilt University	2001-2005
Graduate Teaching Assistant, Vanderbilt University	2000-2001

Honors and Awards
AU IGP 2013 ,“Atomic force microscope for characterization of nanomaterials and surfaces”, Team member (PI: Zhang, Chemistry)	2014
Nominated for Dean's Research Award, COSAM	2014

Professional Activities

Member:

Materials Research Society

Electrochemical Society

Institute of Electrical and Electronics Engineers

NSF Panel Reviewer, for NSF SBIR virtual Panel, Program: Materials for Power Electronics, February 13, 2014

Reviewer for Proprietary Proposal Review Panel (PPRP) for Center for Functional Nanomaterials (CFN) at Brookhaven National Laboratory, starting May 2013 for a period of two years.

Served an External Graduate Committee for the Ph.D. Dissertation of Ms. C.X. Chang at Vanderbilt University, 2013

Reviewer for the following journals: IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Solid State Electronics, Journal of Applied Physics, Applied Physics Letters, Journal of Physics D: Applied Physics, Semiconductor Science and Technology, Nanotechnology and ECS Journal of Solid State Science and Technology

Selected Publications

S. Dhar, A.C. Ahyi, J.R. Williams, S. -H. Ryu and A.K. Agarwal, Temperature dependence of inversion layer carrier carrier concentration and Hall mobility in 4h=SiC MOSFET", accepted for publication, Materials Science Forum (2012)
A. Basile, S. Dhar and P.M. Mooney, "Electron trapping in 4-G SiC MOS capacitors fabricated by pre-oxidation nitrogen implantation", Journal of Applied Physics, 109, 114505 (2011)
B. R. Tuttle, S. Dhar, S.-H Ryu, X. Zhu, J.R. Williams, L.C. Felderman and S.T. Pantelides, "High electron mobility in 4-H SiC metal-oxide-semidconductor field effect transistors", Journal of Applied Physics, 108 054509 (2010)
S. Dhar, S. Haney, L. Cheng, S.-H. Ryu, X. Zhu, A.k. Agarwal, L.C. Yu and K.P. Cheung, "Inversion layer carrier concerntration and mobility in 4-H-SiC metal-oxide-semiconcuctor field effect transistors", Journal of Applied Physics, 108,04549 (2010)
S. Dhar, S.-H Ryu and K. Argarwal, " A study on pre-oxidation N implantation for the improvement of channel mobility in 4-H SiC MOSFETs, IEEE Transactions on Electron. Devices, 57, 1195 (2010)

Last updated: 05/06/2015